n-channel fredfet absolute maximum ratings thermal and mechanical characteristics g d s single die fredfet unit a v mj a unit w c/w c oz g inlbf nm ratings 24 15 82 30 495 11 min typ max 335 0.37 0.15 -55 150 300 0.22 6.2 10 1.1 parameter continuous drain current @ t c = 25c continuous drain current @ t c = 100c pulsed drain current 1 gate-source voltage single pulse avalanche energy 2 avalanche current, repetitive or non-repetitive characteristic total power dissipation @ t c = 25c junction to case thermal resistance case to sink thermal resistance, flat, greased surface operating and storage junction temperature range soldering temperature for 10 seconds (1.6mm from case) package weight mounting torque ( to-247 package), 6-32 or m3 screw symbol i d i dm v gs e as i ar symbol p d r jc r cs t j ,t stg t l w t torque typical applications ? zvs phase shifted and other full bridge ? half bridge ? pfc and other boost converter ? buck converter ? single and two switch forward ? flyback features ? fast switching with low emi ? low t rr for high reliability ? ultra low c rss for improved noise immunity ? low gate charge ? avalanche energy rated ? rohs compliant to-247 d 3 pak apt24f50b apt24f50s 500v, 24a, 0.24 max, t rr 210ns apt24f50b apt24f50s power mos 8 ? is a high speed, high voltage n-channel switch-mode power mosfet. this 'fredfet' version has a drain-source (body) diode that has been optimized for high reliability in zvs phase shifted bridge and other circuits through reduced t rr , soft recovery, and high recovery dv/dt capability. low gate charge, high gain, and a greatly reduced ratio of c rss /c iss result in excellent noise immunity and low switching loss. the intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low emi and reliable paralleling, even when switching at very high frequency. microsemi website - http://www.microsemi.com 050-8132 rev d 09-2009
static characteristics t j = 25c unless otherwise speci? ed dynamic characteristics t j = 25c unless otherwise speci? ed source-drain diode characteristics 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 starting at t j = 25c, l = 8.18mh, r g = 25 , i as = 11a. 3 pulse test: pulse width < 380s, duty cycle < 2%. 4 c o(cr) is de? ned as a ? xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . 5 c o(er) is de? ned as a ? xed capacitance with the same stored energy as c oss with v ds = 67% of v (br)dss . to calculate c o(er) for any value of v ds less than v (br)dss, use this equation: c o(er) = -8.43e-8/v ds ^2 + 1.96e-8/v ds + 5.61e-11. 6 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) microsemi reserves the right to change, without notice, the speci? cations and information contained herein. g d s unit v v/c v mv/c a na unit s pf nc ns unit a v ns c a v/ns min typ max 500 0.60 0.21 0.24 2.5 4 5 -10 250 1000 100 min typ max 24 82 1.0 210 400 0.68 1.64 7.1 9.7 20 min typ max 17 3630 50 390 225 115 90 21 41 16 19 41 14 test conditions v gs = 0v , i d = 250a reference to 25c, i d = 250a v gs = 10v , i d = 11a v gs = v ds , i d = 1ma v ds = 500v t j = 25c v gs = 0v t j = 125c v gs = 30v test conditions mosfet symbol showing the integral reverse p-n junction diode (body diode) i sd = 11a , t j = 25c, v gs = 0v t j = 25c t j = 125c i sd = 11a 3 t j = 25c di sd / dt = 100a/s t j = 125c v dd = 100v t j = 25c t j = 125c i sd 11a, di/dt 1000a/s, v dd = 333v, t j = 125c test conditions v ds = 50v , i d = 11a v gs = 0v , v ds = 25v f = 1mhz v gs = 0v , v ds = 0v to 333v v gs = 0 to 10v , i d = 11a, v ds = 250v resistive switching v dd = 333v , i d = 11a r g = 4.7 6 , v gg = 15v parameter drain-source breakdown voltage breakdown voltage temperature coef? cient drain-source on resistance 3 gate-source threshold voltage threshold voltage temperature coef? cient zero gate voltage drain current gate-source leakage current parameter continuous source current (body diode) pulsed source current (body diode) 1 diode forward voltage reverse recovery time reverse recovery charge reverse recovery current peak recovery dv/dt parameter forward transconductance input capacitance reverse transfer capacitance output capacitance effective output capacitance, charge related effective output capacitance, energy related total gate charge gate-source charge gate-drain charge turn-on delay time current rise time turn-off delay time current fall time symbol v br(dss) v br(dss) / t j r ds(on) v gs(th) v gs(th) / t j i dss i gss symbol i s i sm v sd t rr q rr i rrm dv/dt symbol g fs c iss c rss c oss c o(cr) 4 c o(er) 5 q g q gs q gd t d(on) t r t d(off) t f 050-8132 rev d 09-2009 ap24f50b_s
v gs = 7 &10v 5.5v t j = 125c t j = 25c t j = -55c v gs = 10v 6v 5v v ds > i d(on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 11a t j = 125c t j = 25c t j = -55c c oss c iss i d = 11a v ds = 400v v ds = 100v v ds = 250v t j = 125c t j = 25c t j = -55c t j = 150c t j = 25c t j = 125c t j = 150c c rss 6.5v v gs , gate-to-source voltage (v) g fs , transconductance r ds(on) , drain-to-source on resistance i d , drain current (a) i sd, reverse drain current(a) c, capacitance (pf) i d , drain current (a) i d , drian current (a) v ds(on) , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 1, output characteristics figure 2, output characteristics t j , junction temperature (c) v gs , gate-to-source voltage (v) figure 3, r ds(on) vs junction temperature figure 4, transfer characteristics i d , drain current (a) v ds , drain-to-source voltage (v) figure 5, gain vs drain current figure 6, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (v) figure 7, gate charge vs gate-to-source voltage figure 8, drain current vs source-to-drain voltage 0 5 10 15 20 25 0 5 10 15 20 25 30 -55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 0 100 200 300 400 500 0 20 40 60 80 100 120 140 0 0.3 0.6 0.9 1.2 1.5 80 70 60 50 40 30 20 10 0 2.5 2.0 1.5 1.0 0.5 0 30 25 20 15 10 5 0 16 14 12 10 8 6 4 2 0 40 35 30 25 20 15 10 5 0 70 60 50 40 30 20 10 0 6,000 1,000 100 10 70 60 50 40 30 20 10 0 050-8132 rev d 09-2009 apt24f50b_s
d 3 pak package outline to-247 (b) package outline e3 100% sn plated 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 15.95 (.628) 16.05(.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51(.532) revised 8/29/97 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) revised 4/18/95 microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. 0.1 1 10 100 1 10 100 800 0.1 1 10 100 1 10 100 800 1ms 100ms r ds(on) scaling for different case & junction temperatures: i d = i d(t c = 25 c) *( t j - t c )/125 dc line 100s i dm 10ms 13s 100s i dm 100ms 10ms 13s r ds(on) dc line t j = 150c t c = 25c 1ms peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 i d , drain current (a) t j = 125c t c = 75c i d , drain current (a) v ds , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 9, forward safe operating area figure 10, maximum forward safe operating area z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 11. maximum effective transient thermal impedance junction-to-case vs pulse duration 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 050-8132 rev d 09-2009 apt24f50b_s
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